Graphene field effect transistor chip

Graphene field effect transistor chip Chemische Eigenschaften,Einsatz,Produktion Methoden

Verwenden

• Chemical Sensors
• Biosensors

Allgemeine Beschreibung

Graphene:

• Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
• Graphene Growth substrate: Copper foil, 25 μ thick
• Transfer process: Wet electromechanical separation
• Graphene Thickness: Single Atomic Layer
• Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq
• FET mobility on Al₂O₃: ～3000 cm²/V sec
• FET mobility on Si/SiO₂: ～1500 cm²/V sec
• FET mobility using new experimental method with unwrinkled graphene on Si/SiO₂: ～7000 cm²/V sec
• Material uniformity: >95 % Single layer graphene
• Transparency: >97.4 %

GFET device info:

• GFET Device Dirac Voltage Range 0-60 V
• GFET Chip: 10 devices per chip
• Yield: 90 %

Graphene field effect transistor chip Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

Graphene field effect transistor chip Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

Firmenname	Telefon	E-Mail	Land	Produktkatalog	Edge Rate
Sigma-Aldrich	021-61415566 800-8193336	orderCN@merckgroup.com	China	51471	80

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• Graphene field effect transistor chip