Graphene field effect transistor chip

CAS No.
Chemical Name:
Graphene field effect transistor chip
Synonyms
Graphene field effect transistor chip
CBNumber:
CB63151149
Molecular Formula:
Molecular Weight:
0
MDL Number:
MOL File:
Mol file

Graphene field effect transistor chip Chemical Properties,Uses,Production

Uses

  • Chemical Sensors
  • Biosensors

General Description

Graphene:

  • Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
  • Graphene Growth substrate: Copper foil, 25 μ thick
  • Transfer process: Wet electromechanical separation
  • Graphene Thickness: Single Atomic Layer
  • Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
  • FET mobility on Al2O3: ~3000 cm2/V sec
  • FET mobility on Si/SiO2: ~1500 cm2/V sec
  • FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ~7000 cm2/V sec
  • Material uniformity: >95 % Single layer graphene
  • Transparency: >97.4 %

GFET device info:

  • GFET Device Dirac Voltage Range 0-60 V
  • GFET Chip: 10 devices per chip
  • Yield: 90 %

Graphene field effect transistor chip Preparation Products And Raw materials

Raw materials

Preparation Products

Graphene field effect transistor chip Suppliers

Global( 1)Suppliers
Supplier Tel Email Country ProdList Advantage
Sigma-Aldrich 021-61415566 800-8193336 orderCN@merckgroup.com China 51471 80
Supplier Advantage
Sigma-Aldrich 80
Graphene field effect transistor chip