Graphene field effect transistor chip
- CAS No.
- Chemical Name:
- Graphene field effect transistor chip
- Synonyms
- Graphene field effect transistor chip
- CBNumber:
- CB63151149
- Molecular Formula:
- Molecular Weight:
- 0
- MDL Number:
- MOL File:
- Mol file
Graphene field effect transistor chip Chemical Properties,Uses,Production
Uses
- Chemical Sensors
- Biosensors
General Description
Graphene:
- Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
- Graphene Growth substrate: Copper foil, 25 μ thick
- Transfer process: Wet electromechanical separation
- Graphene Thickness: Single Atomic Layer
- Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
- FET mobility on Al2O3: ~3000 cm2/V sec
- FET mobility on Si/SiO2: ~1500 cm2/V sec
- FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ~7000 cm2/V sec
- Material uniformity: >95 % Single layer graphene
- Transparency: >97.4 %
GFET device info:
- GFET Device Dirac Voltage Range 0-60 V
- GFET Chip: 10 devices per chip
- Yield: 90 %
Graphene field effect transistor chip Preparation Products And Raw materials
Raw materials
Preparation Products
Graphene field effect transistor chip Suppliers
Global( 1)Suppliers
Supplier | Tel | Country | ProdList | Advantage | |
---|---|---|---|---|---|
Sigma-Aldrich | 021-61415566 800-8193336 | orderCN@merckgroup.com | China | 51471 | 80 |
Supplier | Advantage |
---|---|
Sigma-Aldrich | 80 |
Graphene field effect transistor chip