GERMANIUM NITRIDE

Description

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.² It is used in etchant formulation, which was originally developed for silicon oxynitride.³

References

1. G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126
2. H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289
3. P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6

Chemical Properties

brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10]