질화 알루미늄
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질화 알루미늄 속성
- 녹는점
- >2200 °C (lit.)
- 밀도
- 3.26 g/mL at 25 °C (lit.)
- 증기압
- 0Pa at 25℃
- RTECS 번호
- BD1055000
- 용해도
- 무기산에 용해됩니다.
- 물리적 상태
- 가루
- Specific Gravity
- 3.26
- 색상
- 흰색에서 연한 노란색
- 비저항
- 10*17 (ρ/μΩ.cm)
- 수용성
- 분해될 수 있음
- 감도
- Moisture Sensitive
- Crystal Structure
- Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc
- Merck
- 14,353
- 안정성
- 안정적인.
- InChIKey
- PIGFYZPCRLYGLF-UHFFFAOYSA-N
- LogP
- 0 at 25℃
- CAS 데이터베이스
- 24304-00-5(CAS DataBase Reference)
안전
- 위험 및 안전 성명
- 위험 및 사전주의 사항 (GHS)
위험품 표기 | Xi,C | ||
---|---|---|---|
위험 카페고리 넘버 | 36/37/38-34 | ||
안전지침서 | 26-37/39-45-36/37/39 | ||
유엔번호(UN No.) | UN3178 | ||
WGK 독일 | 3 | ||
TSCA | Yes | ||
위험 등급 | 4.1 | ||
포장분류 | II | ||
HS 번호 | 28500090 | ||
기존화학 물질 | KE-01008 |
질화 알루미늄 C화학적 특성, 용도, 생산
화학적 성질
Crystalline solid.물리적 성질
Insulator (Eg =4.26 eV). Decomposes with water, acids, and alkalis to Al(OH)3 and NH3. Crucible container for GaAs crystal growthCharacteristics
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300°C.용도
Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology.제조 방법
Aluminum nitride is conveniently prepared by an electric arc between aluminum electrodes in a nitrogen atmosphere. Crucibles of the pressed powder, sintered at 1985°C, are resistant to liquid aluminum at 1985°C, to liquid gallium at 1316°C, and to liquid boron oxide at 1093°C. Aluminum nitride has good thermal shock resistance and is only slowly oxidized in air (1.3% converted to Al2O3 in 30 h at 1427°C). It is inert to hydrogen at 1705°C but is attacked by chlorine at 593°C.공업 용도
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300 C.Materials Uses
Aluminum nitride (AlN) has an unusual combination of properties: it is an electrical insulator, but an excellent conductor of heat. This is just what is wanted for substrates for high-powered electronics; the substrate must insulate yet conduct the heat out of the microchips. This, and its high strength, chemical stability, and low expansion give it a special role as a heat sinks for power electronics. Aluminum nitride starts as a powder, is pressed (with a polymer binder) to the desired shape, then fired at a high temperature, burning off the binder and causing the powder to sinter.Aluminum nitride is particularly unusual for its high thermal conductivity combined with a high electrical resistance, low dielectric constant, good corrosion, and thermal shock resistance.
Typical uses. Substrates for microcircuits, chip carriers, heat sinks, electronic components; windows, heaters, chucks, clamp rings, gas distribution plates.
질화 알루미늄 준비 용품 및 원자재
원자재
준비 용품
질화 알루미늄 공급 업체
글로벌( 199)공급 업체
공급자 | 전화 | 이메일 | 국가 | 제품 수 | 이점 |
---|---|---|---|---|---|
Hebei Mojin Biotechnology Co., Ltd | +8613288715578 |
sales@hbmojin.com | China | 12456 | 58 |
Ouhuang Engineering Materials (Hubei) Co., Ltd | +8617702722807 |
admin@hbouhuang.com | China | 1696 | 58 |
Shanghai Daken Advanced Materials Co.,Ltd | +86-371-66670886 |
info@dakenam.com | China | 15928 | 58 |
Henan Tianfu Chemical Co.,Ltd. | +86-0371-55170693 +86-19937530512 |
info@tianfuchem.com | China | 21691 | 55 |
Hangzhou FandaChem Co.,Ltd. | 008657128800458; +8615858145714 |
fandachem@gmail.com | China | 9348 | 55 |
Chemson Industrial (Shanghai) Co., Ltd. | 86-21-65208861- 8007 |
sales1@chemson.com.cn | CHINA | 117 | 58 |
career henan chemical co | +86-0371-86658258 |
sales@coreychem.com | China | 29914 | 58 |
Hubei Jusheng Technology Co.,Ltd. | 18871490254 |
linda@hubeijusheng.com | CHINA | 28180 | 58 |
Hebei Guanlang Biotechnology Co., Ltd. | +86-19930503282 |
alice@crovellbio.com | China | 8823 | 58 |
Chongqing Chemdad Co., Ltd | +86-023-61398051 +8613650506873 |
sales@chemdad.com | China | 39916 | 58 |
질화 알루미늄 관련 검색:
질화붕소 산화알루미늄 황산알루미늄 알루미늄분 수소화 알루미늄 질화 알루미늄 알루미늄 질화물 산화물 규소화합물
Silicon nitride
Stannic oxide
Tungsten trioxide
Zirconium dioxide
Silica glass
Titanium dioxide
TITANIUM NITRIDE
GALLIUM NITRIDE
BTS-CATALYST
Aluminum nitride crucible, Cylindrical, Flat Base:Height x OD x ID (mm), 25 x 20 x 15: Vol(ml), 5
ALUMINUM NITRIDE PASTE