질화 알루미늄

질화 알루미늄
질화 알루미늄 구조식 이미지
카스 번호:
24304-00-5
한글명:
질화 알루미늄
동의어(한글):
질화알루미늄;질화알루미늄(ALUMINUMNITRIDE)
상품명:
Aluminum nitride
동의어(영문):
AlN;ALUMINIUM NITRIDE;ALN A;ALN C;ALN B;ALN AT;Nitriloaluminum;Diameter(mm),10;Diameter(mm),22;ALUMINUM NITRIDE
CBNumber:
CB1289123
분자식:
AlN
포뮬러 무게:
40.99
MOL 파일:
24304-00-5.mol
MSDS 파일:
SDS

질화 알루미늄 속성

녹는점
>2200 °C (lit.)
밀도
3.26 g/mL at 25 °C (lit.)
증기압
0Pa at 25℃
RTECS 번호
BD1055000
용해도
무기산에 용해됩니다.
물리적 상태
가루
Specific Gravity
3.26
색상
흰색에서 연한 노란색
비저항
10*17 (ρ/μΩ.cm)
수용성
분해될 수 있음
감도
Moisture Sensitive
Crystal Structure
Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc
Merck
14,353
안정성
안정적인.
InChIKey
PIGFYZPCRLYGLF-UHFFFAOYSA-N
LogP
0 at 25℃
CAS 데이터베이스
24304-00-5(CAS DataBase Reference)
NIST
Aluminum nitride(24304-00-5)
EPA
Aluminum nitride (AlN) (24304-00-5)
안전
  • 위험 및 안전 성명
  • 위험 및 사전주의 사항 (GHS)
위험품 표기 Xi,C
위험 카페고리 넘버 36/37/38-34
안전지침서 26-37/39-45-36/37/39
유엔번호(UN No.) UN3178
WGK 독일 3
TSCA Yes
위험 등급 4.1
포장분류 II
HS 번호 28500090
기존화학 물질 KE-01008
그림문자(GHS): GHS hazard pictogramsGHS hazard pictograms
신호 어: Danger
유해·위험 문구:
암호 유해·위험 문구 위험 등급 범주 신호 어 그림 문자 P- 코드
H372 장기간 또는 반복 노출되면 장기(또는, 영향을 받은 알려진 모든 장기를 명시)에 손상을 일으킴 특정 표적장기 독성 - 반복 노출 구분 1 위험 GHS hazard pictograms P260, P264, P270, P314, P501
H410 장기적 영향에 의해 수생생물에 매우 유독함 수생 환경유해성 물질 - 만성 구분 1 경고 GHS hazard pictograms P273, P391, P501
예방조치문구:
P260 분진·흄·가스·미스트·증기·...·스프레이를 흡입하지 마시오.
P264 취급 후에는 손을 철저히 씻으시오.
P264 취급 후에는 손을 철저히 씻으시오.
P270 이 제품을 사용할 때에는 먹거나, 마시거나 흡연하지 마시오.
P273 환경으로 배출하지 마시오.
P314 불편함을 느끼면 의학적인 조치·조언을 구하시오.
P391 누출물을 모으시오.
NFPA 704
0
0 0

질화 알루미늄 MSDS


Aluminum nitride

질화 알루미늄 C화학적 특성, 용도, 생산

화학적 성질

Crystalline solid.

물리적 성질

Insulator (Eg =4.26 eV).  Decomposes with water, acids, and alkalis to Al(OH)3 and NH3. Crucible container for GaAs crystal growth

Characteristics

Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300°C.

용도

Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology.

제조 방법

Aluminum nitride is conveniently prepared by an electric arc between aluminum electrodes in a nitrogen atmosphere. Crucibles of the pressed powder, sintered at 1985°C, are resistant to liquid aluminum at 1985°C, to liquid gallium at 1316°C, and to liquid boron oxide at 1093°C. Aluminum nitride has good thermal shock resistance and is only slowly oxidized in air (1.3% converted to Al2O3 in 30 h at 1427°C). It is inert to hydrogen at 1705°C but is attacked by chlorine at 593°C.

공업 용도

Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300 C.

Materials Uses

Aluminum nitride (AlN) has an unusual combination of properties: it is an electrical insulator, but an excellent conductor of heat. This is just what is wanted for substrates for high-powered electronics; the substrate must insulate yet conduct the heat out of the microchips. This, and its high strength, chemical stability, and low expansion give it a special role as a heat sinks for power electronics. Aluminum nitride starts as a powder, is pressed (with a polymer binder) to the desired shape, then fired at a high temperature, burning off the binder and causing the powder to sinter.
Aluminum nitride is particularly unusual for its high thermal conductivity combined with a high electrical resistance, low dielectric constant, good corrosion, and thermal shock resistance.
Typical uses. Substrates for microcircuits, chip carriers, heat sinks, electronic components; windows, heaters, chucks, clamp rings, gas distribution plates.

질화 알루미늄 준비 용품 및 원자재

원자재

준비 용품


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