- GALLIUM ANTIMONIDE
-
- $0.01 / 1KG
-
2020-05-28
- CAS:12064-03-8
- Min. Order: 1KG
- Purity: 99%
- Supply Ability: 50 tons
- GALLIUM ANTIMONIDE
-
- $1.00 / 50g
-
2019-07-06
- CAS:12064-03-8
- Min. Order: 50 g
- Purity: 99.9%
- Supply Ability: 20kg
|
| | GALLIUM ANTIMONIDE Basic information |
| | GALLIUM ANTIMONIDE Chemical Properties |
| Melting point | 710 °C
980 °C (lit.) | | density | 5.619 g/mL at 25 °C
5.62 g/mL at 25 °C (lit.) | | form | pieces | | color | brown cubic crystals, crystalline | | resistivity | ~0.1 Ω-cm | | Water Solubility | Insoluble in water. | | Crystal Structure | Cubic, Sphalerite Structure - Space Group F(-4)3m | | Exposure limits | ACGIH: TWA 0.5 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3 | | CAS DataBase Reference | 12064-03-8(CAS DataBase Reference) | | EPA Substance Registry System | Antimony, compd. with gallium (1:1) (12064-03-8) |
| Hazard Codes | Xn,N | | Risk Statements | 20/22-51/53 | | Safety Statements | 61 | | RIDADR | UN 1549 6.1/PG 3 | | WGK Germany | 2 | | TSCA | Yes | | HazardClass | 6.1 | | PackingGroup | III | | HS Code | 2853909090 |
| | GALLIUM ANTIMONIDE Usage And Synthesis |
| Chemical Properties | cub; 6mm pieces and smaller with 99.99% purity; band gap, eV, 0.81 (0K), 0.72 (300K); mobility (300K), cm2/(V·s), 5000 for electrons, 850 for holes; effective mass 0.042 for electrons, 0.40 for holes; dielectric constant 15.7; enthalpy of fusion 25.10kJ/mol; used in semiconducting devices; obtained by direct reaction of Ga and Sb at high temp [HAW93] [KIR82] [CER91] [CRC10] | | Uses | Gallium antimonide can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. It can be used as a component of photoresists and other composites where high refractive index is desirable | | Uses | Gallium antimonide (GaSb), when in pure form, is used in semiconductor industries. | | Uses | GaSb is utilized as a substrate for a low-pass filter using sharp onset oftransmission at 1.8 mm (300 K).
Visible detector. The photovoltaic cell using a p–n junction has its sensibility for 0.4–0.9 mm. The cell has the
maximum detectivity D*=4.5×1011 cm Hz1/2/W (400 Hz) at 0.8 mm and a time constant of ca.
10-3s. | | Production Methods | To grow single crystals, high-grade (more than 99.999%) Ga and antimony (Sb) are mixed stoichiometrically in a quartz or graphite boat and melted in an H2 atmosphere, followed by horizontal zone
refining of the mixture. To grow large single crystals, the material obtained using the method above
is put into a quartz or graphite crucible and melted in an H2 atmosphere after removing the surface
oxide by etching. The large crystals are then grown by the Czochralski method. To obtain highgrade GaSb, the atmospheric gas H2 must be purified by flowing through heated palladium (Pd).
The GaSb with the carrier density of p-type 2×1016 cm-3and mobility of 2740 cm2/Vs has been
reported for pure GaSb.This crystal can be also synthesized by the solution method. GaSb precipitates by decreasing the temperature of liquid Ga, containing 10%–20% (atomic ratio) of Sb, slowly
from the melting point of GaSb. | | Structure and conformation | The space lattice of gallium antimonide (GaSb) belongs to the cubic system, and its zinc blendetype structure has a lattice constant of a=0.6118 nm, Gsa–Sb=0.264 nm. |
| | GALLIUM ANTIMONIDE Preparation Products And Raw materials |
|