| Identification | Back Directory | [Name]
Silicon carbide | [CAS]
409-21-2 | [Synonyms]
SiC
ua1
ua2
ua3
ua4
uf15
scw1
kz3m
kz5m
kz7m
sc201
du-a1
du-a2
du-a3
du-a4
Simax
ye5626
Exolon
du-a3c
crystar
gc10000
Meccarb
nicalon
Resilon
TWS-100
Silundum
carborun
Lonsicar
Carsilon
SIC B-HP
carbolon
Carborex
Carbomant
carbonite
annanoxck
SIC UF-05
SIC UF-10
SIC UF-15
SIC UF-25
SIC BF-12
SIC BF-17
Carbogran
crystolon
sd-gp6000
sd-gp8000
densicc500
electrolon
betarundum
BOILEEZERS
carbofraxm
Carborndum
nanopowder
CARBORUNDUM
greendensic
crystolon37
crystolon39
tokawhisker
sc9(carbide)
betarundumuf
carborundeum
BOILING CHIPS
betarundumst-s
carbonsilicide
hitaceramsc101
siliconcarbtde
medium,120grit
Silicon carbid
SILICIUMCARBIDE
silicon calbide
SILICON CARBIDE
greendensicgc800
Silicone carbide
carborundumpowder
carburedesilicium
siliconmonocarbide
Siliconcarbidemesh
siliconcarbide[sic]
SILICONCARBIDEFIBRE
betarundumultrafine
Silicon(IV) carbide
siliconcarbide(sic)
siliconcarbide,powder
Silicon carbide (SiC)
SILICON CARBIDE BLACK
SILICON CARBIDE GREEN
SILICON CARBIDE, BETA
BLACK SILICON CARBIDE
Silicon carbide wafer
Carborundumpowderfine
silicon earbide fibre
SILICONCARBIDEWHISKER
GRANULARSILICONCARBIDE
SILICON CARBIDE, 98.8%
SILICON CARBIDE, ALPHA
Carborundum fine powder
Siliconcarbide,-100mesh
SILICONCARBIDEPLATELETS
silicon carbide, needles
Silicon carbide, β-phase
SILICON CARBIDE WHISKERS
CARBORUNDUM BOILING CHIPS
SILICON CARBIDE(BETAFORM)
SILICON CARBIDE (A PHASE)
Silicon Carbide, 325 Mesh
Silicon carbide, ^b-phase
Silicon(IV) carbide/ 98.8%
Silicon carbide total dust
SILICON CARBIDE,-400 MESH
SILICON CARBIDE, NANOPOWDER
Carborundumpowdermediumgrit
Carborundumpowdercoarsegrit
Silicon carbide,micropowder
Silicon carbide nanowhiskers
SILICON CARBIDE (BETA PHASE)
SILICON CARBIDE, 200-450 MESH
Carborundumpowdersuperfinegrit
CARBORUNDUM (SILICON CARBIDE )
Silicon carbide, beta, 95% min
Silicon carbide respirable dust
CARBORUNDUM BOILING CHIPS 4 MESH
CARBORUNDUM BOILING CHIPS 8 MESH
Carborundum powder, fine, 320grit
Silicon carbide, β-phase, 95% min
CARBORUNDUM BOILING CHIPS 14 MESH
CARBORUNDUM BOILING CHIPS 20 MESH
Silicon carbide fiberous (as f/cc)
Silicon carbide, ^b-phase, 95% min
Silicon carbide, 99% (metals basis)
Carborundum powder, coarse, 46 grit
Carborundum powder, medium, 120 grit
Silicon carbide, beta-phase, 95% min
SILICON CARBIDE WAFER-51mm X 0.24mm
Silicon carbide, 99.5% (metals basis)
Silicon carbide powder, fine, 320 grit
Silicon carbide powder, coarse, 46 grit
Carborundum powder, superfine, 600 grit
Silicon carbide powder, medium, 120 grit
Silicon carbide, ^a, 99.8% (metals basis)
Silicon carbide 200-450 Mesh particle size
Silicon carbide powder, superfine, 600 grit
silicon carbide, 400 grinding compound, 2oz
silicon carbide, 600 grinding compound, 2oz
Silicon carbide, beta, 99.8% (metals basis)
Silicon carbide, alpha, 99.8% (metals basis)
Silicon carbide whiskers, 99% (metals basis)
Silicon carbide, ɑ-phase, 99.8% (metals basis)
Silicon carbide, β-phase, 99.8% (metals basis)
Silicon carbide, ^b-phase, 99.8% (metals basis)
Silicon carbide, ^a-phase, 99.8% (metals basis)
Silicon carbide-400 Mesh particle size, >=97.5%
Silicon carbide nanopowder, <100 nm particle size
Silicon carbide, beta-phase, 99.8% (metals basis)
Silicon carbide, 600 grinding coMpound, 2oz (57g)
Silicon carbide, 400 grinding coMpound, 2oz (57g)
Silicon carbide, alpha-phase, 99.8% (metals basis)
SIC UF-25 SILICON CARBIDE GRADE UF-25-A PRODUCT OF H.C. STARCK
SIC BF-12 SILICON CARBIDE GRADE BF-12-A PRODUCT OF H.C. STARCK
SIC B-H.P. SILICON CARBIDE GRADE B-HP-A PRODUCT OF H.C. STARCK
SIC UF-10 SILICON CARBIDE GRADE UF-10-A PRODUCT OF H.C. STARCK
SIC BF-17 SILICON CARBIDE GRADE BF-17-A PRODUCT OF H.C. STARCK
SIC UF-05 SILICON CARBIDE GRADE UF-05-A PRODUCT OF H.C. STARCK
Silicon carbide nanofiber, D <2.5 mum, L/D >= 20, 98% trace metals basis
SIC UF-15 PREMIX COARSE SILICON CARBIDE GRADE UF-15 PREMIX COARSE-A PRODUCT OF H.C. STARCK
Silicon carbide sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.5% (metals basis excluding B)
Silicon carbide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.5% (metals basis excluding B)
Silicon carbide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.5% (metals basis excluding B)
Silicon carbide sputtering target, 25.4mm (1.0in) dia x 3.18mm (0.125in) thick, 99.5% (metals basis excluding B)
Silicon carbide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.5% (metals basis excluding B) | [EINECS(EC#)]
206-991-8 | [Molecular Formula]
CSi | [MDL Number]
MFCD00049531 | [MOL File]
409-21-2.mol | [Molecular Weight]
40.1 |
| Chemical Properties | Back Directory | [Description]
Silicon carbide is a hard covalently bonded material predominantly produced by the carbothermal reduction of silica. Silicon carbide is made by heating silica sand and petroleum coke packed around electrodes in an electric resistance furnace to above 2200°C. Depending on the exact reaction conditions the resulting silicon carbide is either a fine powder or a bonded mass that requires crushing and milling to produce a usable feedstock. This material is very resistant to abrasion and to corrosion with a molten slag. It also has excellent resistance to thermal spalling. However as it is a carbide, it will oxidise readily, silicon carbide has a fairly high conductivity.
Several hundred structures of silicon carbide (polytypes) have been identified which have different stacking arrangements for the silicon and carbon atoms. The simplest structure is a diamond structure which is designated /3-SiC. Other structures are either hexagonal or rhombic and are referred to as a-SiC. | [Definition]
Bluish-black, iridescent crystals. Insoluble in water and alcohol; soluble in fused alkalies and molten iron. Excellent thermal
conductivity, electrically conductive, resists oxida-
tion at high temperatures. Noncombustible, a nui-
sance particulate.
| [Appearance]
Silicon carbide is a yellow to green to bluishblack, iridescent crystalline substance. Colorless when pure. | [Melting point ]
2700 °C (lit.) | [density ]
3.22 g/mL at 25 °C(lit.)
| [refractive index ]
2.6500 | [solubility ]
Soluble in molten sodium hydroxide, potassium hydroxide and in molten iron. | [form ]
nanopowder
| [color ]
Green | [Specific Gravity]
3.22 | [Stability:]
Stability | [Resistivity]
107–200 (ρ/μΩ.cm) | [Water Solubility ]
Soluble in molten alkalis (NaOH, KOH) and molten iron. Insoluble in water. | [Crystal Structure]
Cubic, Sphalerite Structure - Space Group F(-4)3m | [Hydrolytic Sensitivity]
1: no significant reaction with aqueous systems | [Merck ]
14,8492 | [Exposure limits]
ACGIH: TWA 10 mg/m3; TWA 3 mg/m3; TWA 0.1 fiber/cm3
OSHA: TWA 15 mg/m3; TWA 5 mg/m3
NIOSH: TWA 10 mg/m3; TWA 5 mg/m3 | [InChIKey]
HBMJWWWQQXIZIP-UHFFFAOYSA-N | [IARC]
2A (Vol. 111) 2017 | [NIST Chemistry Reference]
Silicon monocarbide(409-21-2) | [EPA Substance Registry System]
Silicon carbide (SiC)(409-21-2) |
| Hazard Information | Back Directory | [Chemical Properties]
light grey powder | [General Description]
Yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700°C. Density 3.21 g cm-3. Insoluble in water. Soluble in molten alkalis (NaOH, KOH) and molten iron. | [Reactivity Profile]
Silicon carbide is non-combustible. Generally unreactive. Soluble in molten alkalis (NaOH, KOH) and in molten iron. | [Hazard]
Upper respiratory tract irritant. Probable
carcinogen.
| [Potential Exposure]
A potential danger to those involved in the manufacture of silicon carbide abrasives, refractories, and semiconductors. Silicon carbide fibers are also produced in fibrous form as reinforcing fibers for composite materials. | [First aid]
If this chemical gets into the eyes, remove any contact lenses at once and irrigate immediately for at least 15 minutes, occasionally lifting upper and lower lids. Seek medical attention immediately. If this chemical contacts the skin, remove contaminated clothing and wash immediately with soap and water. Seek medical attention immediately. If this chemical has been inhaled, remove from exposure. Transfer promptly to a medical facility. | [Incompatibilities]
Dust may form explosive mixture with air. Sublimes with decomposition @ 2700C. | [Waste Disposal]
Landfill | [Physical properties]
the properties of silicon carbide are that it is a refractory material (high melting point), it has excellent thermal conductivity and low thermal expansion, consequently it displays good thermal shock resistance. In addition, the high hardness, corrosion resistance and stiffness lead to a wide range of applications where wear and corrosion resistance are primary performance requirements. Silicon carbide possesses interesting electrical properties due to its semiconductor characteristics, the resistance of different compositions varying by as much as seven orders of magnitude. | [Characteristics]
Silicon carbide is a premium-priced unit which is employed in lining work for its uniformity, abrasion resistance and dimensional stability. It is resistant to most organics, inorganic acids, alkalis and salts in a variety of concentrations except to hydrofluoric acid and acid fluorides. The permeable units have the lowest resistance. | [Preparation]
Silicon carbide is prepared by fusing a mixture of silica (sand) and carbon (coke) with some salt and saw dust in an electric arc furnace at 3000°C.
SiO2(Sand)+3C(Coke)--(3000℃)--Sic+2CO
Salt and saw dust is added to infuse air into the product so that it can be broken into pieces easily. The product obtained is first washed with strong acid followed by strong base to remove basic and acidic impurities respectively. Finally, it is washed with water. | [Production Methods]
Silicon carbide, also known by the trade name Carborundum,
has been manufactured and used as an abrasive material for
more than a century. It combines desirable properties of
hardness and thermal resistance. It is produced by heating
high-grade silica sand with finely ground carbon at 2400°C in
an electric furnace. In its powdered or granular form, it
has been used as the abrasive material in “paper and wheels.”
It is used as an abrasive in sandblasting and engraving. It has
been incorporated into ceramics and glass and especially into
refractory ceramic materials. | [Reactions]
SiC is formed by the reaction with C at high temperature. It is not etched by acid other than the mixture of hydrofluoric acid and nitric acid. It reacts with caustic solution generating H2 to produce alkali silicate. Good alloys can be formed at the composition ratio of 0%–100% with Ge. (Refer to Ge.) | [Health Hazard]
Silicon carbide, in certain forms,
may be a cause of pneumoconiosis in exposed
workers.
Silicon carbide has generally been considered
to be an inert dust with little adverse effect
on the lungs. | [Flammability and Explosibility]
Nonflammable | [Industrial uses]
Silicon carbide is one of the very few totally man-made minerals used in refractory work. These are:
Oxide-bonded-(S102, A1201, Si02 or silicate glass), silicon oxynitride (Si2 ON2), silicon nitride (S13N4)
The first three of these four bonding systems result in a permeable product, and when failure occurs in such masonry systems due to chemical degradation, it is usually due to attack on the bond. Thus, permeable units (where the corrodent penetrates the mass) are far more rapidly damaged.
Self-bonded”—(silicon carbide to silicon carbide) impermeable ones, where the attack is limited to the surface.
The self-bonded product can be manufactured by either of two methods: reaction bonded or sintered. Both will produce an impermeable unit, and they have roughly comparable chemical resistances, but they do not have identical physical properties. |
| Questions And Answer | Back Directory | [Crystal System]
SiC takes two types of crystal systems—the cubic structure b-SiC and the hexagonal structure a-SiC. b-SiC takes a zinc blende type structure with a lattice constant of a=0.4349 nm and the spacing between adjacent layers is 0.2512 nm. a-SiC takes many types. 4H and 6H a-SiC have a hexagonal primitive cell with the number of layers of 4 and 6, respectively. 15R, 21R, 33R, and 51R a-SiC have the rhombohedron primitive cell with the number of layers of 15, 21, 33, and 51, respectively. | [Uses]
Silicon carbide (SiC), nearly as hard as diamonds, is used as an abrasive in grinding wheels
and metal-cutting tools, for lining furnaces, and as a refractory in producing nonferrous
metals. |
| Questions and Answers (Q&A) | Back Directory | [Uses]
Industry
Application
Role/benefit
Abrasive machining processes
Processing of glass, ceramic, stone, refractory, hard alloy, etc.
Abrasive and cutting tools/durability and low cost
Electronic
Light-emitting diodes
Component/electroluminescence property
Semiconductor devices
Component/has wide forbidden band (2.86 EV) and p and n two conductive types
Electric systems
Gapped SiC lightning arresters
Resistance/voltage-dependent property
Sic switches and SiC Schottky diodes
Raw material/anti high-temperature and high-voltage properties
Ceramics
Hard ceramics used for composite armor, bulletproof vests, etc.
Raw material/low density and high strength
Temperature ceramics
Raw material/has high intensity at High temperature
Astronomy
Astronomical telescopes
Mirror material/low thermal expansion coefficient, high hardness, rigidity and thermal conductivity
Aerospace
Gas filter and combustion chamber nozzle
Raw material/anti high-temperature property
Silicon carbide fibre
Reinforcing of metal,resin,alloy,glass,etc.
Reinforcing material/helps to improve all kinds of features
Heat shield material, high temperature filter cloth and conveyor belt
Raw material/anti high-temperature property
Automobile
Brake discs
Ingredient/helps to increase temperature resistance
Sintered form for diesel particulate filters
Ingredient/anti high-temperature property
Oil additive
Helps to educe friction, emissions, and harmonics
Carbon
Graphene production
Raw material
Manufacture of biochar
Coating material/helps to improve the Hardness, strength and wear resistance
Alchemy blast furnace brick
Raw material/anti high-temperature property
Graphite electrode production
Coating component/increase the coating capacity of rapid temperature change
Others
Thin filament pyrometry
Filament material/anti high-temperature property
Nuclear fuel particles
Ingredient/anti high-temperature property
Synthetic moissanite gemstone
Raw material/similar to diamond in several important respects
Steel production
Additional fuel/allows the furnace to process more scrap with the same charge of hot metal
Catalyst support
Support material/large surface area
Carborundum printmaking
Paste material for ink plate
| [References]
1.https://en.wikipedia.org/wiki/Silicon_carbide#Uses
2.http://www.softschools.com/formulas/chemistry/silicon_carbide_uses_properties_structure_formula/282/
3.https://www.britannica.com/science/silicon-carbide
4.http://accuratus.com/silicar.html
5.https://www.intechopen.com/books/mostdownloaded/silicon-carbide-materials-processing-and-applications-in-electronic-devices
6.https://www.azom.com/article.aspx?ArticleID=3271
7.https://www.chemicalbook.com/ProductChemicalPropertiesCB2431905.htm
|
|
|