| Identification | Back Directory | [Name]
tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium | [CAS]
210363-27-2 | [Synonyms]
t-Butyliminotris(diethylamino)niobium(V)
t-Butylimido tris(diethylamido)niobium(V)
(tert)-Butyliminotris(diethylamino)niobium
(t-Butylimido)tris(diethylamino)niobium, 98%
Tris(diethylamido)(tert-butylimido)niobium(V)
(T-BUTYLIMIDO)TRIS(DIETHYLAMINO)NIOBIUM(V),MIN.98%
(t-Butylimido)tris(diethylamino)niobium(V), min. 98%
(t-Butylimido)tris(diethylamino)niobium(V), min. 98% TBTDEN
tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium
Tris(diethylamido)(tert-butylimido)niobium(V) packaged for use in deposition systems | [Molecular Formula]
C16H39N4Nb-3 | [MDL Number]
MFCD16659983 | [MOL File]
210363-27-2.mol | [Molecular Weight]
380.414 |
| Chemical Properties | Back Directory | [density ]
1.015 g/mL at 25 °C | [Fp ]
-3℃ | [form ]
liquid | [color ]
brown | [Sensitive ]
air sensitive, moisture sensitive | [InChI]
1S/C4H9N.3C4H10N.Nb/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;+3 | [InChIKey]
CBCDPJRPMPTFKA-UHFFFAOYSA-N | [SMILES]
CCN(CC)[Nb](=NC(C)(C)C)(N(CC)CC)N(CC)CC |
| Hazard Information | Back Directory | [Uses]
Tris(diethylamido)(tert-butylimido)niobium(V) is used as a niobium precursor - In atomic layer deposition to create niobium-doped tin oxide (NTO), a conductive material. These NTO scaffolds provide a large surface area for thin platinum layers, improving electron transfer in dye-sensitized solar cells.
- In metal-organic chemical vapor deposition (MOCVD) to grow niobium nitride (NbN) thin films. These films, deposited on silicon wafers, offers good conductivity and are suitable for electronic applications such as gate stacks.
| [reaction suitability]
core: niobium |
|
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Sigma-Aldrich
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Energy Chemical
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Merck KGaA
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