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| | TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) Basic information |
| Product Name: | TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) | | Synonyms: | Tetrakis(dimethylamido)hafnium(IV),TDMAH, Tetrakis(dimethylamino)hafnium(IV);TDMAH;Tetrakis(dimethylamino)hafnium(IV) 99.999%;Dimethylamine hafnium(4+) salt;Hafnium tetradimethylamide;Hafnium(4+) dimethylamide;TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV), 99.99+%;Tetrakis(dimethylamido)hafnium(IV) packaged for use in deposition systems | | CAS: | 19782-68-4 | | MF: | C8H24HfN4 | | MW: | 354.79 | | EINECS: | | | Product Categories: | ALD Precursors | | Mol File: | 19782-68-4.mol |  |
| | TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) Chemical Properties |
| Melting point | 26-29 °C(lit.) | | Boiling point | 85°C/0.1mm | | density | 1.098 g/mL at 25 °C | | Fp | 109 °F | | form | crystal | | color | colorless to pale yellow | | Specific Gravity | 1.40 | | Hydrolytic Sensitivity | 8: reacts rapidly with moisture, water, protic solvents | | Sensitive | moisture sensitive, store cold | | InChIKey | ZYLGGWPMIDHSEZ-UHFFFAOYSA-N | | CAS DataBase Reference | 19782-68-4 |
| | TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) Usage And Synthesis |
| Uses | Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices. | | General Description | Please inquire for bulk quantity, pricing, and packaging options. |
| | TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) Preparation Products And Raw materials |
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