- INDIUM ARSENIDE
-
- $1.00 / 50g
-
2019-07-06
- CAS:1303-11-3
- Min. Order: 50 g
- Purity: 99.99%
- Supply Ability: 20kg
|
| | INDIUM ARSENIDE Basic information |
| Product Name: | INDIUM ARSENIDE | | Synonyms: | Arsinetriylindium(III);indiganylidynearsane;INDIUM ARSENIDE;Indium arsenide, 99.9999% trace metals basis;Indium arsenide, Hardly attacked by mineral acids;indiamarsenide;indiumarsenide(inas);99.9999%(metalsbasis) | | CAS: | 1303-11-3 | | MF: | AsIn | | MW: | 189.74 | | EINECS: | 215-115-3 | | Product Categories: | Inorganics | | Mol File: | 1303-11-3.mol |  |
| | INDIUM ARSENIDE Chemical Properties |
| Melting point | 936°C | | density | 5.69 g/cm3 | | refractive index | 3.51 | | solubility | insoluble in acid solutions | | form | 1.5 To 9.5mm Polycrystalline Pieces | | color | Gray | | Water Solubility | Insoluble in water. | | Crystal Structure | Cubic, Sphalerite Structure - Space Group F(-4)3m | | Merck | 14,4949 | | Exposure limits | ACGIH: TWA 0.01 mg/m3; TWA 0.1 mg/m3
NIOSH: IDLH 5 mg/m3; TWA 0.1 mg/m3; Ceiling 0.002 mg/m3 | | EPA Substance Registry System | Indium arsenide (InAs) (1303-11-3) |
| RIDADR | UN1557 | | TSCA | Yes | | HazardClass | 6.1 | | PackingGroup | III |
| Provider | Language |
|
ALFA
| English |
| | INDIUM ARSENIDE Usage And Synthesis |
| Chemical Properties | Crystals.Insoluble in acids. | | Uses | Indium arsenide is used in semiconductor electronics, construction of infrared detectors, terahertz radiation source, as it is a strong Photo-dember emitter, superior electron mobility and velocity, in high-power applications detector, diode lasers. | | Uses | In semiconductor electronics. | | Uses | Indium arsenide is used in semiconductor devices. | | Production Methods | In and As are put into a silica boat at the stoichiometric ratio. The materials are put into a silica
tube together with a small amount of As. The small amount of As is heated to about 300℃ to
eliminate O2 under evacuation followed by sealing off the tube. The boat is zone-refined at the speed of 2 cm/h in the first run and 5 cm/h in the following several runs. The obtained ingot is
pulled out and cut by half to use as a single crystal source. Loading the source into the silica boat
with roughened inner wall, the boat is put into a horizontal silica tube together with a small amount
of As followed by vacuum sealing in the same manner as the first run. A single crystal is obtained
by putting the silica tube into the horizontal Stockbarger furnace with three zones: A (560℃),
B (1000℃) and C (900℃), and by traveling the tube to the direction A→B→C with the speed of
2–5 cm/h. The n-type samples with about 1016 cm-3are grown using this method. The
Czochralski method is also available.
The vapor phase method is available to deposit the thin films. For instance, InAs is grown on the
low temperature area by heating the closed tube loaded with In+AsCl3
together with Cl2
, which
works as a carrier gas. By using this method, we can grow the epitaxial layer. | | Hazard | See indium; arsenic. | | Structure and conformation | The space lattice of InAs belongs to the cubic system, and its zinc-blend structure has a lattice
constant of a=0.6058 nm and the nearest neighbor distance of 0.262 nm. |
| | INDIUM ARSENIDE Preparation Products And Raw materials |
|