| Identification | Back Directory | [Name]
GERMANIUM NITRIDE | [CAS]
12065-36-0 | [Synonyms]
GERMANIUM NITRIDE
GERMANIUM TETRANITRIDE
germanium(iii) nitride
trigermanium tetranitride
GERMANIUM NITRIDE, 99.99+%
Germanium(III) nitride >=99.99% trace metals basis | [EINECS(EC#)]
235-064-0 | [Molecular Formula]
Ge3N4 | [MDL Number]
MFCD00016118 | [MOL File]
12065-36-0.mol | [Molecular Weight]
273.95 |
| Chemical Properties | Back Directory | [Melting point ]
>850 °C (dec.)(lit.)
| [density ]
5.35 g/mL at 25 °C(lit.)
| [form ]
orthorhombic crystals | [Water Solubility ]
insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10] |
| Hazard Information | Back Directory | [Chemical Properties]
brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10] |
| Questions And Answer | Back Directory | [Description]
Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3
| [References]
- G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126
- H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289
- P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6
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