スチビントリイルインジウム(III)
スチビントリイルインジウム(III) 価格
もっと(3)
| メーカー |
製品番号 |
製品説明 |
CAS番号 |
包装 |
価格 |
更新時間 |
購入 |
|
富士フイルム和光純薬株式会社(wako)
|
W01SRM93-4920 |
アンチモン化インジウム(III) (99.99%-In) PURATREM
Indium(III) antimonide (99.99%-In) PURATREM |
1312-41-0 |
5g |
￥52900 |
2024-03-01 |
購入 |
|
富士フイルム和光純薬株式会社(wako)
|
W01SRM93-4920 |
アンチモン化インジウム(III) (99.99%-In) PURATREM
Indium(III) antimonide (99.99%-In) PURATREM |
1312-41-0 |
25g |
￥208100 |
2024-03-01 |
購入 |
|
Sigma-Aldrich Japan
|
740942 |
≥99.99% trace metals basis
Indium antimonide ≥99.99% trace metals basis |
1312-41-0 |
5g |
￥14900 |
2018-12-25 |
購入 |
スチビントリイルインジウム(III) 化学特性,用途語,生産方法
解説
InSb(236.58)．成分金属の計算量を水素または希ガス中で混合溶融すると得られる．金属間化合物で，立方晶系，せん亜鉛鉱型構造．Sb-In2.80 Å．密度5.74 g cm－3．融点535 ℃．Ⅲ-Ⅴ半導体，ホール素子，バンドギャップ0.18 eV(25 ℃)．化合物半導体の素材，赤外線検出素子，磁気抵抗材などに用いられる．[CAS 1312-41-0]
森北出版「化学辞典（第2版）
化学的特性
Crystalline solid.
物理的性質
Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water.
使用
In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.
製造方法
Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.
調製方法
Intermetallic semiconductors of indium are formed from
group III and group V elements, requiring very high purity
of the elements (0.1 ppm).
一般的な説明
This product has been enhanced for energy efficiency.
危険性
See indium; antimony.
Structure and conformation
The space lattice of InSb belongs to the cubic system and zinc-blende-type structure called InSb-I
at room temperature and under atmospheric pressure has a lattice constant of a=0.64789 nm and
In–Sb=0.280 nm. A single crystal has cleavage of (110) plane. It transforms to white tin-type
InSb-II at high temperatures and under high pressure.
スチビントリイルインジウム(III) 上流と下流の製品情報
原材料
準備製品
スチビントリイルインジウム(III) 生産企業
Global( 78)Suppliers
1312-41-0(スチビントリイルインジウム(III))キーワード:
- 1312-41-0
- INDIUM ANTIMONIDE
- indiumcompd.withantimony(1:1)
- Indium antimonide (99.99%-In) PURATREM
- Indiumantimonideblackxtl
- indium stibide
- INDIUM ANTIMONIDE, 99.99+%
- Indium antimonide, 99.5%
- INDIUM ANTIMONIDE, 99.999%
- indium antimonide, electronic grade
- Stibinetriylindium(III)
- Indium antimonide, Electronic Grade, 99.99% (metals basis)
- Indium antimonide, 99.999% (metals basis)
- InSb wafer: P-Type, (211)+/-1°: Resist.8-18 Ohm cm: cc:4-9 x1013ücm-3ü (77K): 1 side polished: dia 18-30mmx0,7mm thick
- Antimony-indium
- Indium antimonide >=99.99% trace metals basis
- Indium antimonide, 99.999% trace metals basis
- antimonycompd.withindium(1:1)
- INDIUM(III)ANTIMONIDE(99.99%-IN)PURATREM
- IndiuM antiMonide (InSb)
- Indium antimonide lump
- Indium(III) antimonide
- Indium(III) antimonide ISO 9001：2015 REACH
- indiganylidynestibane
- Indium Antimonide Nanoparticles
- スチビントリイルインジウム(III)
- アンチモン化インジウム
- インジウムアンチモン
- アンチモン化インジウム(III) (99.99%-In) PURATREM
- インジウム（III）アンチモニド
- インジウムモノアンチモニド
- インジガニリジンスチバン