| Identification | More | [Name]
GALLIUM ANTIMONIDE | [CAS]
12064-03-8 | [Synonyms]
GALLIUM ANTIMONIDE
antimony,compd.withgallium(1:1)
GALLIUM ANTIMONIDE PIECES-6 MESH &
Gallium antimonide, single crystal substrate (100)
GALLIUM ANTIMONIDE, 99.999%
Gallium antimonide, 99.99% (metals basis)
Gallium antimonide, 99% (metals basis) | [EINECS(EC#)]
235-058-8 | [Molecular Formula]
GaSb | [MDL Number]
MFCD00016101 | [Molecular Weight]
191.48 | [MOL File]
12064-03-8.mol |
| Chemical Properties | Back Directory | [Melting point ]
980 °C(lit.)
| [density ]
5.62 g/mL at 25 °C(lit.)
| [form ]
pieces
| [color ]
brown cubic crystals, crystalline | [Resistivity]
~0.1 Ω-cm | [Water Solubility ]
Insoluble in water. | [semiconductor properties]
<100> | [Crystal Structure]
Cubic, Sphalerite Structure - Space Group F(-4)3m | [Exposure limits]
ACGIH: TWA 0.5 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3 | [InChI]
1S/Ga.Sb | [InChIKey]
VTGARNNDLOTBET-UHFFFAOYSA-N | [SMILES]
[Ga]#[Sb] | [Uses]
Semiconducting devices. | [Knoop Microhardness]
4480, N/mm2 | [CAS DataBase Reference]
12064-03-8(CAS DataBase Reference) | [EPA Substance Registry System]
Antimony, compd. with gallium (1:1) (12064-03-8) |
| Hazard Information | Back Directory | [Chemical Properties]
cub; 6mm pieces and smaller with 99.99% purity; band gap, eV, 0.81 (0K), 0.72 (300K); mobility (300K), cm2/(V·s), 5000 for electrons, 850 for holes; effective mass 0.042 for electrons, 0.40 for holes; dielectric constant 15.7; enthalpy of fusion 25.10kJ/mol; used in semiconducting devices; obtained by direct reaction of Ga and Sb at high temp [HAW93] [KIR82] [CER91] [CRC10] | [Production Methods]
To grow single crystals, high-grade (more than 99.999%) Ga and antimony (Sb) are mixed stoichiometrically in a quartz or graphite boat and melted in an H2 atmosphere, followed by horizontal zone
refining of the mixture. To grow large single crystals, the material obtained using the method above
is put into a quartz or graphite crucible and melted in an H2 atmosphere after removing the surface
oxide by etching. The large crystals are then grown by the Czochralski method. To obtain highgrade GaSb, the atmospheric gas H2 must be purified by flowing through heated palladium (Pd).
The GaSb with the carrier density of p-type 2×1016 cm-3and mobility of 2740 cm2/Vs has been
reported for pure GaSb.This crystal can be also synthesized by the solution method. GaSb precipitates by decreasing the temperature of liquid Ga, containing 10%–20% (atomic ratio) of Sb, slowly
from the melting point of GaSb. | [Structure and conformation]
The space lattice of gallium antimonide (GaSb) belongs to the cubic system, and its zinc blendetype structure has a lattice constant of a=0.6118 nm, Gsa–Sb=0.264 nm. |
| Safety Data | Back Directory | [Hazard Codes ]
Xn,N | [Risk Statements ]
R20/22:Harmful by inhalation and if swallowed .
R51/53:Toxic to aquatic organisms, may cause long-term adverse effects in the aquatic environment . | [Safety Statements ]
S61:Avoid release to the environment. Refer to special instructions safety data sheet . | [RIDADR ]
UN 1549 6.1/PG 3
| [WGK Germany ]
2
| [TSCA ]
Yes | [HazardClass ]
6.1 | [PackingGroup ]
III | [HS Code ]
2853909090 | [Storage Class]
13 - Non Combustible Solids | [Hazard Classifications]
Acute Tox. 4 Inhalation
Acute Tox. 4 Oral
Aquatic Chronic 2 |
|
| Company Name: |
Alfa Aesar
|
| Tel: |
400-6106006 |
| Website: |
http://chemicals.thermofisher.cn |
| Company Name: |
Energy Chemical
|
| Tel: |
021-021-58432009 400-005-6266 |
| Website: |
http://www.energy-chemical.com |
|