| Identification | More | [Name]
HAFNIUM TERT-BUTOXIDE | [CAS]
2172-02-3 | [Synonyms]
HAFNIUM (IV) T-BUTOXIDE
HAFNIUM T-BUTOXIDE
HAFNIUM TERT-BUTOXIDE
HAFNIUM TETRA-T-BUTOXIDE
Hafnium(IV) t-butoxide (99.9%-Hf)
Hafnium(IV) tert-butoxide
Hafnium tert-butoxide, 99.9% (metals basis excluding Zr), Zr< 0.2% | [Molecular Formula]
C16H36HfO4 | [MDL Number]
MFCD00070458 | [Molecular Weight]
470.94 | [MOL File]
2172-02-3.mol |
| Chemical Properties | Back Directory | [Melting point ]
2℃ | [Boiling point ]
90 °C5 mm Hg(lit.) | [density ]
1.166 g/mL at 25 °C(lit.)
| [refractive index ]
n20/D 1.424(lit.)
| [Fp ]
83 °F
| [solubility ]
Soluble in hydrocarbons, reacts with alcohols, ketones, and esters | [Specific Gravity]
1.166 | [Hydrolytic Sensitivity]
7: reacts slowly with moisture/water | [Sensitive ]
Moisture Sensitive/Light Sensitive | [CAS DataBase Reference]
2172-02-3(CAS DataBase Reference) |
| Safety Data | Back Directory | [Hazard Codes ]
Xi | [Risk Statements ]
R10:Flammable. | [Safety Statements ]
S16:Keep away from sources of ignition-No smoking . | [RIDADR ]
UN 1993 3/PG 3
| [WGK Germany ]
3
| [TSCA ]
No | [HazardClass ]
3 | [PackingGroup ]
II |
| Hazard Information | Back Directory | [Uses]
Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices. | [General Description]
Atomic number of base material: 72 Hafnium |
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