Graphene field effect transistor chip

Graphene field effect transistor chip C화학적 특성, 용도, 생산

용도

• Chemical Sensors
• Biosensors

일반 설명

• Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
• Graphene Growth substrate: Copper foil, 25 μ thick
• Transfer process: Wet electromechanical separation
• Graphene Thickness: Single Atomic Layer
• Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq
• FET mobility on Al₂O₃: ～3000 cm²/V sec
• FET mobility on Si/SiO₂: ～1500 cm²/V sec
• FET mobility using new experimental method with unwrinkled graphene on Si/SiO₂: ～7000 cm²/V sec
• Material uniformity: >95 % Single layer graphene
• Transparency: >97.4 %

• GFET Device Dirac Voltage Range 0-60 V
• GFET Chip: 10 devices per chip
• Yield: 90 %

Graphene field effect transistor chip 준비 용품 및 원자재

원자재

준비 용품

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