갈륨 아르세니드

갈륨 아르세니드
갈륨 아르세니드 구조식 이미지
카스 번호:
1303-00-0
한글명:
갈륨 아르세니드
동의어(한글):
갈륨아르세니드;갈륨아르세니드;갈륨 아르세나이드;갈륨 모노아르세나이드;갈륨 모노아르세나이드 (GaAs);갈륨 아르세나이드 (GaAs)
상품명:
Gallium arsenide
동의어(영문):
Lead(Pb);GALLIUM ARSENIDE;Arsinidynegallium;galliummonoarsenide;gallanylidynearsane;galliumarsenide(gaas);galliumarsenide[gaas];gallium(III) arsenide;Gallium arsenide wafer;Gallium Arsenide Powder
CBNumber:
CB7249244
분자식:
AsGa
포뮬러 무게:
144.64
MOL 파일:
1303-00-0.mol
MSDS 파일:
SDS

갈륨 아르세니드 속성

녹는점
1238°C
밀도
5.31 g/mL at 25 °C (lit.)
증기압
0Pa at 20℃
굴절률
3.57
물리적 상태
플레이크 크리스탈
색상
짙은 회색
Specific Gravity
5.31
비저항
≥1E7 Ω-cm
수용성
염산에 용해됩니다. 물, 에탄올, 메탄올 및 아세톤에 용해되지 않습니다.
Crystal Structure
Cubic, Sphalerite Structure - Space Group F(-4)3m
Merck
14,4347
CAS 데이터베이스
1303-00-0(CAS DataBase Reference)
IARC
(Vol. 86, 100C) 2012
EPA
Gallium arsenide (1303-00-0)
안전
  • 위험 및 안전 성명
  • 위험 및 사전주의 사항 (GHS)
위험품 표기 T,N
위험 카페고리 넘버 23/25-50/53-48/23-45
안전지침서 20/21-28-45-60-61-53
유엔번호(UN No.) UN 1557 6.1/PG 2
WGK 독일 3
RTECS 번호 LW8800000
F 고인화성물질 10
TSCA Yes
위험 등급 6.1
포장분류 II
HS 번호 2853909090
유해 물질 데이터 1303-00-0(Hazardous Substances Data)
독성 mouse,LD50,intraperitoneal,4700mg/kg (4700mg/kg),BEHAVIORAL: SOMNOLENCE (GENERAL DEPRESSED ACTIVITY)PERIPHERAL NERVE AND SENSATION: FLACCID PARALYSIS WITHOUT ANESTHESIA (USUALLY NEUROMUSCULAR BLOCKAGE)BEHAVIORAL: FOOD INTAKE (ANIMAL),Gigiena i Sanitariya. For English translation, see HYSAAV. Vol. 45(10), Pg. 13, 1980.
기존화학 물질 KE-17426
유해화학물질 필터링 97-1-119
중점관리물질 필터링 별표1-97
함량 및 규제정보 물질구분: 유독물질; 혼합물(제품)함량정보: 비소 또는 그 화합물과 비소화합물을 0.1% 이상 함유한 혼합물
그림문자(GHS): GHS hazard pictograms
신호 어: Danger
유해·위험 문구:
암호 유해·위험 문구 위험 등급 범주 신호 어 그림 문자 P- 코드
H350 암을 일으킬 수 있음 (노출되어도 암을 일으키지 않는다는 결정적인 증거가 있는 노출경로가 있다면 노출경로 기재) 발암성 물질 구분 1A, 1B 위험 GHS hazard pictograms
H372 장기간 또는 반복 노출되면 장기(또는, 영향을 받은 알려진 모든 장기를 명시)에 손상을 일으킴 특정 표적장기 독성 - 반복 노출 구분 1 위험 GHS hazard pictograms P260, P264, P270, P314, P501
예방조치문구:
P202 모든 안전 조치 문구를 읽고 이해하기 전에는 취급하지 마시오.
P260 분진·흄·가스·미스트·증기·...·스프레이를 흡입하지 마시오.
P264 취급 후에는 손을 철저히 씻으시오.
P264 취급 후에는 손을 철저히 씻으시오.
P270 이 제품을 사용할 때에는 먹거나, 마시거나 흡연하지 마시오.
P280 보호장갑/보호의/보안경/안면보호구를 착용하시오.
P308+P313 노출 또는 접촉이 우려되면 의학적인 조치· 조언를 구하시오.
NFPA 704
1
3 2

갈륨 아르세니드 C화학적 특성, 용도, 생산

화학적 성질

Gallium arsenide contains 48.2% gallium and 51.8% arsenic and is considered an intermetallic compound. It occurs as cubic crystals with a dark gray metallic sheen. Gallium arsenide is electroluminescent in infrared light. Gallium arsenide readily reacts with oxygen in air, forming a mixture of oxides of gallium and arsenic on the crystal surface. Gallium arsenide presents the following properties: hardness, 4.5; thermal expansion coefficient, 5.9×106; thermal conductivity, 0.52Wunits; specific heat, 0.086 cal/g/ ℃; intrinsic electron concentration, 107; energy gap at room temperature, 1.38 eV; electron mobility, 8800 cm2/V/s; effective mass for electrons, 0.06m0; lattice constant,5.6–54 AO; dielectric constant, 11.1; intrinsic resistivity at 300K=3.7×108Ωcm; electron lattice mobility at 300K= 10,000 cm2/V/s; intrinsic charge density at 300K=1.4 106 cm-3; electron diffusion constant at 300K=310 cm2/s; and hole diffusion constant=11.5 cm2/s.
Gallium Arsenide GaAs Rods Wafers
Garlic odor when moistened. Finely divided gallium arsenide can react vigorously with steam, energetic acids, and oxidizers to evolve arsine gas, and can release arsenic fumes when heated to decomposition. The molten form attacks quartz.

물리적 성질

Gray cubic crystal; density 5.316 g/cm3; melts at 1,227°C; hardness 4.5 Mohs; lattice constant 5.653?; dielectric constant 11.1; resistivity (intrinsic) at 27°C, 3.7x108 ohm-cm.

용도

In semiconductor applications (transistors, solar cells, lasers).Gallium arsenide is among the most widely used intermetallic semiconductor components (Harrison, 1986; McIntyr and Sherin, 1989). Gallium arsenide is also incorporated into light-emitting diodes and photovoltaic cells, while gallium alloys are used for dental amalgam as a low toxicity replacement for mercury.

제조 방법

Gallium arsenide is prepared by passing a mixture of arsenic vapor and hydrogen over gallium(III) oxide heated at 600°C: Ga2O3 + 2As + 3H2 2GaAs + 3H2O
The molten material attacks quartz. Therefore, quartz boats coated with carbon by pyrolytic decomposition of methane should be used in refining the compound to obtain high purity material. Gallium arsenide is produced in polycrystalline form as high purity, single crystals for electronic applications. It is produced as ingots or alloys, combined with indium arsenide or gallium phosphide, for semiconductor applications.

일반 설명

Dark gray crystals with a metallic greenish-blue sheen or gray powder. Melting point 85.6°F (29.78°C).

공기와 물의 반응

Stable in dry air. Tarnishes in moist air. Insoluble in water.

반응 프로필

GALLIUM ARSENIDE can react with steam, acids and acid fumes. Reacts with bases with evolution of hydrogen. Attacked by cold concentrated hydrochloric acid. Readily attacked by the halogens. The molten form attacks quartz.

위험도

Toxic metal. Questionable carcinogen

화재위험

Flash point data for GALLIUM ARSENIDE are not available; however, GALLIUM ARSENIDE is probably combustible.

Safety Profile

Confirmed carcinogen. Mddly toxic by intraperitoneal route. Most arsenic compounds are poisons. Can react with steam, acids, and acid fumes to evolve the deadly poisonous arsine. Molten gallium arsenide attacks quartz. When heated to decomposition it emits very toxic fumes of As. See also ARSENIC COMPOUNDS and GALLIUM COMPOUNDS.

Carcinogenicity

Carcinogenesis.
Gallium is antineoplastic in several human and murine cancer cell lines and in some in vivo cancers. It has been used experimentally in patients in the treatment of lymphatic malignancies (including multiple myelomas) and for urothelial malignancies. However, the dissociation of gallium arsenide into gallium and arsenic is a factor to take into account. A considerable number of studies have evaluated the carcinogenic potential of arsenic and various arsenic compounds.

Structure and conformation

The space lattice of gallium arsenide (GaAs) belongs to the cubic system Td2, and its zincblende-type structure has a lattice constant of a=0.5654 nm and a distance to its nearest neighbor of 0.244 nm.

갈륨 아르세니드 준비 용품 및 원자재

원자재

준비 용품


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