GERMANIUM NITRIDE
- $0
- Product name: GERMANIUM NITRIDE
- CAS: 12065-36-0
- MF: Ge3N4
- MW: 273.95
- EINECS:235-064-0
- MDL Number:MFCD00016118
- Synonyms:trigermanium tetranitride ;GERMANIUM NITRIDE, 99.99+%;germanium(iii) nitride;GERMANIUM NITRIDE;GERMANIUM TETRANITRIDE;Germanium(III) nitride >=99.99% trace metals basis;Cobalt Nickel Chromium (Co-Ni-Cr) Alloy Sputtering Targets;PubChem ID: 16684757
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Properties
Melting point :>850 °C (dec.)(lit.)
Density :5.35 g/mL at 25 °C(lit.)
solubility :insoluble in H2O, acid solutions, aquaregia
form :orthorhombic crystals
Specific Gravity :5.35
color :orthorhombic crystals, crystalline
Water Solubility :insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
EPA Substance Registry System :Germanium nitride (Ge3N4) (12065-36-0)
Density :5.35 g/mL at 25 °C(lit.)
solubility :insoluble in H2O, acid solutions, aquaregia
form :orthorhombic crystals
Specific Gravity :5.35
color :orthorhombic crystals, crystalline
Water Solubility :insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
EPA Substance Registry System :Germanium nitride (Ge3N4) (12065-36-0)
Safety Information
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Description
Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3Related product price
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