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ChemicalBook >> CAS DataBase List >> GERMANIUM NITRIDE

GERMANIUM NITRIDE

GERMANIUM NITRIDE price.
  • $227 - $227
  • Product name: GERMANIUM NITRIDE
  • CAS: 12065-36-0
  • MF: Ge3N4
  • MW: 273.95
  • EINECS:235-064-0
  • MDL Number:MFCD00016118
  • Synonyms:trigermanium tetranitride ;GERMANIUM NITRIDE, 99.99+%;germanium(iii) nitride;GERMANIUM NITRIDE;GERMANIUM TETRANITRIDE;Germanium(III) nitride >=99.99% trace metals basis;PubChem ID: 16684757;GERMANIUM NITRIDE ISO 9001:2015 REACH
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Selected condition:

Brand

  • Sigma-Aldrich

Package

  • 5g
  • ManufacturerSigma-Aldrich
  • Product number447552
  • Product descriptionGermanium(III) nitride ≥99.99% trace metals basis
  • Packaging5g
  • Price$227
  • Updated2020-08-18
  • Buy
Manufacturer Product number Product description Packaging Price Updated Buy
Sigma-Aldrich 447552 Germanium(III) nitride ≥99.99% trace metals basis 5g $227 2020-08-18 Buy

Properties

Melting point: :>850 °C (dec.)(lit.)
Density  :5.35 g/mL at 25 °C(lit.)
form  :orthorhombic crystals
Specific Gravity :5.35
Water Solubility  :insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
EPA Substance Registry System :Germanium nitride (Ge3N4) (12065-36-0)

Safety Information

Symbol(GHS):
Signal word: Warning
Hazard statements:
Code Hazard statements Hazard class Category Signal word Pictogram P-Codes
H315 Causes skin irritation Skin corrosion/irritation Category 2 Warning P264, P280, P302+P352, P321,P332+P313, P362
H319 Causes serious eye irritation Serious eye damage/eye irritation Category 2A Warning P264, P280, P305+P351+P338,P337+P313P
H335 May cause respiratory irritation Specific target organ toxicity, single exposure;Respiratory tract irritation Category 3 Warning
Precautionary statements:
P261 Avoid breathing dust/fume/gas/mist/vapours/spray.
P305+P351+P338 IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continuerinsing.

Description

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3

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