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ChemicalBook >> CAS DataBase List >> GERMANIUM NITRIDE

GERMANIUM NITRIDE

GERMANIUM NITRIDE price.
  • $0
  • Product name: GERMANIUM NITRIDE
  • CAS: 12065-36-0
  • MF: Ge3N4
  • MW: 273.95
  • EINECS:235-064-0
  • MDL Number:MFCD00016118
  • Synonyms:trigermanium tetranitride ;GERMANIUM NITRIDE, 99.99+%;germanium(iii) nitride;GERMANIUM NITRIDE;GERMANIUM TETRANITRIDE;Germanium(III) nitride >=99.99% trace metals basis;Cobalt Nickel Chromium (Co-Ni-Cr) Alloy Sputtering Targets;PubChem ID: 16684757
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Properties

Melting point :>850 °C (dec.)(lit.)
Density :5.35 g/mL at 25 °C(lit.)
solubility :insoluble in H2O, acid solutions, aquaregia
form :orthorhombic crystals
Specific Gravity :5.35
color :orthorhombic crystals, crystalline
Water Solubility :insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
EPA Substance Registry System :Germanium nitride (Ge3N4) (12065-36-0)

Safety Information

Symbol(GHS): GHS hazard pictograms
Signal word: Warning
Hazard statements:
Code Hazard statements Hazard class Category Signal word Pictogram P-Codes
H315 Causes skin irritation Skin corrosion/irritation Category 2 Warning GHS hazard pictograms P264, P280, P302+P352, P321,P332+P313, P362
H319 Causes serious eye irritation Serious eye damage/eye irritation Category 2A Warning GHS hazard pictograms P264, P280, P305+P351+P338,P337+P313P
H335 May cause respiratory irritation Specific target organ toxicity, single exposure;Respiratory tract irritation Category 3 Warning GHS hazard pictograms
Precautionary statements:
P261 Avoid breathing dust/fume/gas/mist/vapours/spray.
P264 Wash hands thoroughly after handling.
P264 Wash skin thouroughly after handling.
P271 Use only outdoors or in a well-ventilated area.
P280 Wear protective gloves/protective clothing/eye protection/face protection.
P302+P352 IF ON SKIN: wash with plenty of soap and water.
P305+P351+P338 IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continuerinsing.

Description

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3

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