- GALLIUM TELLURIDE
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- $0.00 / 1KG
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2025-04-04
- CAS:12024-14-5
- Min. Order: 1KG
- Purity: 98%
- Supply Ability: 1ton
- GALLIUM TELLURIDE
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- $1.00 / 50g
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2019-07-06
- CAS:12024-14-5
- Min. Order: 50 g
- Purity: 99.9%
- Supply Ability: 20kg
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| | GALLIUM TELLURIDE Basic information |
| Product Name: | GALLIUM TELLURIDE | | Synonyms: | GALLIUM(II) TELLURIDE;GALLIUM TELLURIDE;galliumtelluride(gate);Gallium(II) telluride, 99.999% (metals basis);Gallium monotelluride;Gallium(II) telluride (GaTe);Gallium(II) telluride lump;Gallium(II) telluride, 99.999%, trace metals basis | | CAS: | 12024-14-5 | | MF: | GaH2Te | | MW: | 199.34 | | EINECS: | 234-690-1 | | Product Categories: | | | Mol File: | 12024-14-5.mol |  |
| | GALLIUM TELLURIDE Chemical Properties |
| Melting point | 824°C | | density | 5.440 | | form | monoclinic crystals | | color | monoclinic crystals, crystalline | | Water Solubility | Insoluble in water. | | Sensitive | Moisture Sensitive | | Exposure limits | ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3 | | EPA Substance Registry System | Gallium telluride (GaTe) (12024-14-5) |
| Provider | Language |
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ALFA
| English |
| | GALLIUM TELLURIDE Usage And Synthesis |
| Chemical Properties | 6mm pieces and smaller with 99.999% purity; monoclinic or hexagonal [KIR78] [CER91] | | Uses | Gallium(II) telluride acts as a semiconductor is used in the electronics industry. | | Synthesis | A method for the preparation of a two-dimensional gallium telluride material
method, characterized by the following steps: step I. GaTe single crystals were prepared by dosing Ga:Te in a substance amount ratio of 1:1 using the vertical Bridgman crystal growth method. Step II. In a Michelona Universal 2440-750 glove box under Ar atmosphere, a large block of surface light was selected
smooth and wrinkle-free GaTe bulk material and separated it into multiple blocks along the natural solvation surface. Step 3: Inside a Michelona Universal 2440-750 glove box under Ar atmosphere, a GaTe sheet with a thickness of about 6-8 ??m was torn away from the surface of the GaTe bulk material with a bright surface and less damage using Scotch tape. Step 4: In a Michelona Universal 2440-750 glove box under Ar atmosphere, the Scotch tape with the GaTe sheet was bonded and separated several times until the surface of the tape was no longer shiny and a denser layer of GaTe with a thickness of several hundred nanometers was successfully attached. |
| | GALLIUM TELLURIDE Preparation Products And Raw materials |
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