| Identification | Back Directory | [Name]
TETRAKIS(DIETHYLAMINO)ZIRCONIUM | [CAS]
13801-49-5 | [Synonyms]
ZIRCONIUM DIETHYLAMIDE
TETRAKIS(DIETHYLAMINO)ZIRCONIUM
Tetrakis(diethylamino)zirkonium
Zirconium, tetrakis(diethylamino)-
Tetrakis(diethylamino)zirconium,99%
tetrakis(diethylamido)zirconium(iv)
Tetrakis(diethylaMino)zirconiuM(IV), 99%
TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+% | [Molecular Formula]
C16H40N4Zr | [MDL Number]
MFCD00015649 | [MOL File]
13801-49-5.mol | [Molecular Weight]
379.74 |
| Chemical Properties | Back Directory | [Boiling point ]
128 °C0.05 mm Hg(lit.)
| [density ]
1.026 g/mL at 25 °C(lit.)
| [refractive index ]
n20/D 1.51(lit.)
| [Fp ]
54 °F
| [storage temp. ]
water-free area | [form ]
liquid | [color ]
yellow | [Sensitive ]
Moisture Sensitive |
| Hazard Information | Back Directory | [Uses]
Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions. | [General Description]
Atomic number of base material: 40 Zirconium | [reaction suitability]
core: zirconium |
| Questions And Answer | Back Directory | [Description]
Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method3.
| [Reference]
- Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
- Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
- Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.
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| Company Name: |
INTATRADE GmbH
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| Tel: |
+49 3493/605464 |
| Website: |
www.intatrade.de |
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