| Identification | Back Directory | [Name]
TETRAKIS(DIETHYLAMINO)ZIRCONIUM | [CAS]
13801-49-5 | [Synonyms]
ZIRCONIUM DIETHYLAMIDE
TETRAKIS(DIETHYLAMINO)ZIRCONIUM
Tetrakis(diethylamino)zirkonium
Zirconium, tetrakis(diethylamino)-
Tetrakis(diethylamino)zirconium,99%
tetrakis(diethylamido)zirconium(iv)
Tetrakis(diethylaMino)zirconiuM(IV), 99%
TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+% | [Molecular Formula]
C16H40N4Zr | [MDL Number]
MFCD00015649 | [MOL File]
13801-49-5.mol | [Molecular Weight]
379.74 |
| Chemical Properties | Back Directory | [Boiling point ]
128 °C0.05 mm Hg(lit.)
| [density ]
1.026 g/mL at 25 °C(lit.)
| [refractive index ]
n20/D 1.51(lit.)
| [Fp ]
54 °F
| [storage temp. ]
water-free area | [form ]
liquid | [color ]
yellow | [Sensitive ]
Moisture Sensitive | [InChI]
1S/4C4H10N.Zr/c4*1-3-5-4-2;/h4*3-4H2,1-2H3;/q4*-1;+4 | [InChIKey]
GOVWJRDDHRBJRW-UHFFFAOYSA-N | [SMILES]
CCN(CC)[Zr](N(CC)CC)(N(CC)CC)N(CC)CC |
| Hazard Information | Back Directory | [Uses]
Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions. | [General Description]
Atomic number of base material: 40 Zirconium | [reaction suitability]
core: zirconium |
| Safety Data | Back Directory | [Hazard Codes ]
F,Xi | [Risk Statements ]
11-14-36/37/38 | [Safety Statements ]
16-26-36 | [RIDADR ]
UN 3398 4.3/PG 2
| [WGK Germany ]
3
| [HazardClass ]
4.3 | [PackingGroup ]
II | [Storage Class]
4.3 - Hazardous materials which set free flammable gases upon contact with water | [Hazard Classifications]
Eye Irrit. 2
Flam. Liq. 3
Skin Irrit. 2
STOT SE 3
Water-react 2 |
| Questions And Answer | Back Directory | [Description]
Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method3.
| [Reference]
- Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
- Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
- Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.
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J & K SCIENTIFIC LTD.
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https://www.jkchemical.com |
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Sigma-Aldrich
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https://www.sigmaaldrich.cn |
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3A Chemicals
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Shanghai UCHEM Inc.
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http://www.myuchem.com/ |
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www.chemicalbook.com/ShowSupplierProductsList1759320/0_EN.htm |
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Energy Chemical
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400-0056266 |
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www.energy-chemical.com |
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