Nickel synthesis

Yield:-

Reaction Conditions:

with formic acid at 225 - 400; under 0.750075 - 1.50015 Torr;Inert atmosphere;

Steps:

5

Nickel Film Deposition. An R-75 ALD reactor manufactured by PicosunOy was used for thin film deposition experiments. The reactor was operated under a flow of nitrogen at a pressure of 1-2 mbar. The deposition of copper metal films by ALD was studied by employing bis(N',N'- dimethylpivalohydrazato)nickel(ll), (NiL2), as the copper source and formic acid as the reducing agent. In initial growth trials, the sublimation temperature of NiL2 was found to be optimum at 105 ⁰C at the reactor pressure. The substrate temperatures were held between 225 and 400 ⁰C. Nitrogen was used as both the carrier and purge gas and was obtained for air using a Taxol GeniSys nitroGenerator. Deposition experiments were performed using a range of NiL2 pulse lengths (0.5-5.0 seconds), formic acid pulse (0.1-3.0 seconds), and nitrogen purge lengths (3.0-5.0 seconds) to determine the extent of surface saturation. Films were deposited on Si(100) with and without HF treatment, Corning Eagle XG glass, and TaN substrates obtained from Silicon Quest International. One substrate, one quarter of a 3-inch wafer, was used in each deposition experiment.

References:

WO2010/132871,2010,A1 Location in patent:Page/Page column 42