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ChemicalBook CAS DataBase List Octyl gallate
1034-01-1

Octyl gallate synthesis

9synthesis methods
1-Octanol

111-87-5

Gallic acid

149-91-7

Octyl gallate

1034-01-1

Gallic acid (0.3 mmol, 50 mg), octanol (0.9 mmol) and concentrated sulfuric acid (0.07 mL) were added to the microwave reaction flask. After sealing the reaction bottle, it was placed in a microwave reactor and the reaction was radiated at 100 °C for 50 min. After completion of the reaction, it was cooled to room temperature and the volatile components of the reaction mixture were evaporated to dryness. The residue was dissolved with ethyl acetate (30 mL) and washed sequentially with saturated sodium bicarbonate solution (3 x 20 mL) and sodium chloride solution (1 x 20 mL). The organic layer was dried over anhydrous sodium sulfate, filtered and concentrated under reduced pressure. The resulting crude product was purified by column chromatography with the eluent being a solvent mixture of hexane/ethyl acetate in the ratio of 3:7, v/v/v/v. The melting point and spectral data of the target compound octyl gallate were in agreement with those reported in literature [25d]. The isolated yield of octyl gallate was 70% under the present experimental conditions.

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Yield:1034-01-1 94.1%

Reaction Conditions:

with tris(pentafluorophenyl)borate in tolueneReflux;

Steps:

2.2
To the reaction flask into n-octanol 27.4 g (0.21 mol), ethyl gallate 39.6g (0.2mol), tris (pentafluoro-phenyl) borane 4g (0.008mol) and 350 g of toluene, with heating, the system became For clarification, the reflux reaction was further slowly increased for 5 to 6hours, and the raw material was The added refluxing materials sulfhydryl silica gel 7g performedfor capture of heavy metals, hot filtered, the filtrate was concentrated to recover the solvent and then added dropwise to 150g room temperature water slurried, filtered and dried to give electricalsub-level gallate Octyl 53.1g, HPLC: 98.7 %, yield: 94.1%.

References:

Pulasi Science And Technology (Shanghai) Co., Ltd.;Cai Weibing;Qi Weijun CN109438243, 2019, A Location in patent:Paragraph 0040; 0041; 0044; 0045

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